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Filters: Author is Feng-Chuan Chuang [Clear All Filters]
Effect of MA orientation and thickness on the bandgap in quasi-2D perovskites (PEA)₂(MA)ₙ₋₁PbₙI₃ₙ₊₁, J. Phys. Chem. C 128, 17091 (2024).
Electronic, magnetic, and topological properties of ferromagnetic 2D perovskite-type oxides, New J. Phys. 26, 123031 (2024).
Causal structure of interacting Weyl fermions in condensed matter systems, Nat. Commun. 14, 2228 (2023).
First-principles investigation of the electronic and magnetic properties of heptauthrene nanostructure on Cu(111) substrate,
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Proceedings of the 41st Samahang Pisika ng Pilipinas Physics Conference, SPP-2023-2F-02 (Siargao, 2023).
. Prediction of quantum spin Hall and Rashba effects in two-dimensional ilmenite oxides, Chinese J. Phys. 86, 242 (2023).
Topological phases in the ordered double transition metal carbide MXenes, Asian Network School and Workshop on Complex Condensed Matter Systems 2023, P.37 (IOP VAST, Vietnam, 2023).
. Electronic and topological band evolution of VB-group transitionmetal monocarbides M₂C (M=V, Nb, or Ta) bulk and monolayer, Mater. Today Commun. 32, 103875 (2022).
Interplay between anisotropic spin texture and large gap topological insulating phases in functionalized MXenes, Chinese J. Phys. 77, 2346 (2022).
Robust tunable large-gap quantum spin Hall states in monolayer Cu₂S on insulating substrates, ACS Omega 7, 15760 (2022).
. Spin-lattice-charge coupling in quasi-one-dimensional spin-chain NiTe₂O₅, Phys. Rev. Mater. 6, 044409 (2022).
Topological phases in the ordered double transition metal carbide MXenes (W₂M₂C₃T₂, M = Nb, Ta, or V; T = O or F),
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Proceedings of the 40th Samahang Pisika ng Pilipinas Physics Conference, SPP-2022-3E-02 (Legazpi City, 2022).
. Band engineering and van Hove singularity on HfX₂ thin films (X = S, Se, or Te), ACS Appl. Electron. Mater. 3, 1071 (2021).
Prediction of massless Dirac fermions in a carbon nitride covalent network, Appl. Phys. Lett. 118, 133104 (2021).
Theoretical prediction of topological insulators in two-dimensional ternary transition metal chalcogenides (MM'X₄, M = Ta, Nb, or V; M'= Ir, Rh, or Co; X = Se or Te), Chinese J. Phys. 73, 95 (2021).
Tuning topological phases and electronic properties of monolayer ternary transition metal chalcogenides (ABX₄, A/B = Zr, Hf, or Ti; X = S, Se, or Te), Appl. Phys. Lett. 118, 111901 (2021).
Giant emission enhancement of solid-state gold nanoclusters by surface engineering, Angew. Chem. Int. Ed. 59, 8270 (2020).
Large-gap topological insulators in functionalized ordered double transition metal carbide MXenes, Phys. Rev. B 102, 075306 (2020).
. Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb, Chinese J. Phys. 67, 246 (2020).
Engineering surface structure of spinel oxides via high-valent vanadium doping for remarkably enhanced electrocatalytic oxygen evolution reaction, ACS Appl. Mater. Interfaces 11, 33012 (2019).
Quantum phase transition of correlated iron-based superconductivity in LiFe₁₋ₓCoₓAs, Phys. Rev. Lett. 123, 217004 (2019).
Growth of a predicted two-dimensional topological insulator based on InBi-Si(111)-√7×√7, Phys. Rev. B 98, 121404 (2018).
Prediction of quantum anomalous hall effect in MBi and MSb (M: Ti, Zr, and Hf) honeycombs, Nanoscale Res. Lett. 13, 43 (2018).
Prediction of two-dimensional organic topological insulator in metal-DCB lattices, Appl. Phys. Lett. 113, 233301 (2018).
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